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产品信息
UD4614L-SO8-R
DESCRIPTION
The UTC UD4614 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The
UTC UD4614 may be used in H-bridge, inverters and other applications.
FEATURES
* N-Channel: 40V/6A
RDS(ON) = 23.2mΩ (typ.) @ VGS =10V
RDS(ON) = 32.6mΩ (typ.) @ VGS= 4.5V
* P-Channel: -40V/-5A
RDS(ON) = 34.7mΩ (typ.) @ VGS= -10V
RDS(ON) = 50.6mΩ (typ.) @ VGS= -4.5V
* Super high dense cell design
* Reliable and Rugged
ORDERING INFORMATION
Ordering Number
Lead Free Halogen Free
Package
Packing
UD4614L-S08-R UD4614G-S08-R
SOP-8
Tape Reel
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
N-Channel:
Pulsed Drain Current (Note3) TC=25°C
Power Dissipation TC=25°C
TC=100°C
2
1.28
W
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (Note3) TC=25°C
ID
6
A
IDM
20
A
PD
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
P-Channel:
Pulsed Drain Current (Note3) TC=25°C
Power Dissipation TC=25°C
TC=100°C
2
1.28
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (Note3) TC=25°C
ID
-5
A
IDM
-20
A
PD
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.