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产品信息
AO3414 / A03414
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. Standard Product AO3414 is Pb-free (meets ROHS & Sony 259 specifications). AO3414L
is a Green Product ordering option. AO3414 and AO3414L are electrically identical.
Features
VDS (V) = 20V
ID = 4.2 A (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 4.5V)
RDS(ON) < 63mΩ (VGS = 2.5V)
RDS(ON) < 87mΩ (VGS = 1.8V)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Continuous Drain Current TA=25°C
TA=70°C
4.2
3.2
Power Dissipation TA=25°C
TA=70°C
1.4
0.9
Parameter
Symbol
Symbol
Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
ID
A
Pulsed Drain Current
IDM
15
A
PD
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
V
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient t ≤ 10s
RθJA
70
90
°C/W
aximum Junction-to-Ambient Steady-State
RθJA
100
125
°C/W
Maximum Junction-to-Lead Steady-State
RθJL
63
80
°C/W