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产品分类
产品信息
AO3413 / A03413
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = -20V
ID = -3 A
RDS(ON) < 97mΩ (VGS = -4.5V)
RDS(ON) < 130mΩ (VGS = -2.5V)
RDS(ON) < 190mΩ (VGS = -1.8V)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Continuous Drain Current TA=25°C
TA=70°C
-3
-2.4
Power Dissipation TA=25°C
TA=70°C
1.4
0.9
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
ID
A
Pulsed Drain Current
IDM
-15
A
PD
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient t ≤ 10s
RθJA
70
90
°C/W
Maximum Junction-to-Ambient Steady-State
RθJA
100
125
°C/W
Maximum Junction-to-Lead Steady-State
RθJL
63
80
°C/W